| PART |
Description |
Maker |
| ZVP2110ASTZ UZVN3306ASTOB DIODESINC-ZVN3306ASMTA U |
230 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET TO-92 COMPATIBLE, E-LINE PACKAGE-3
270 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
100 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
260 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
90 mA, 450 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
450 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes, Inc.
ZETEX PLC
DIODES INC
|
| NX3008PBK NX3008PBK215 NX3008PBK-15 |
30 V, 230 mA P-channel Trench MOSFET SMALL SIGNAL, FET
|
NXP Semiconductors N.V.
|
| SEMIX151GAR12T4S |
Trench IGBT Modules 230 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON
|
| XC3190-4PQ160I XC3190-4PQ208I XC3142-3TQ144C XC314 |
FPGA, 320 CLBS, 5000 GATES, 230 MHz, PQFP160
FPGA, 320 CLBS, 5000 GATES, 230 MHz, PQFP208
FPGA, 144 CLBS, 3000 GATES, 270 MHz, PQFP144
FPGA, 144 CLBS, 3000 GATES, 230 MHz, PQFP100
|
XILINX INC
|
| FSF2510 FSF2210 FSN1410 FSN1606 IRF540 |
N Channel MOSFET; Package: TO-254; trr (nsec): 600; t(on) (nsec): 100; ID (A): 25; RDS(on) (Ohms): 0.07; PD (W): 125; BVDSS (V): 100; Rq: 1; VSD (V): 2.3 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-254; trr (nsec): 300; t(on) (nsec): 23; ID (A): 22; RDS(on) (Ohms): 0.1; PD (W): 100; BVDSS (V): 100; Rq: 1.3; VSD (V): 2.5 22 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 250; t(on) (nsec): 14; ID (A): 14; RDS(on) (Ohms): 0.18; PD (W): 50; BVDSS (V): 100; Rq: 2; VSD (V): 2.5 14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 220; t(on) (nsec): 21; ID (A): 16; RDS(on) (Ohms): 0.07; PD (W): 50; BVDSS (V): 60; Rq: 2; VSD (V): 1.8 16 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
STMicroelectronics N.V.
MICROSEMI CORP
|
| PSMN5R0-100PS |
N-channel 100 V 5 mΩ standard level MOSFET in TO-220 120 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
| MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| FDT86113LZ |
100V N-Channel PowerTrenchMOSFET
N-Channel PowerTrench? MOSFET 100 V, 3.3 A, 100 m
N-Channel PowerTrench? MOSFET 100 V, 3.3 A, 100 m
|
Fairchild Semiconductor
|
| PSMN039-100YS |
N-channel LFPAK 100 V 39.5 m惟 standard level MOSFET
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
N-channel LFPAK 100 V 39.5 m standard level MOSFET 28.1 A, 100 V, 0.0395 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
|
NXP Semiconductors N.V.
|
| PPF150M |
N Channel MOSFET; Package: TO-254; ID (A): 21; RDS(on) (Ohms): 0.053; PD (W): 150; BVDSS (V): 100; Rq: 0.83; 34 A, 100 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
|
